P55NF06 Datasheet PDF – 60V, 50A, N-ch, Power MOSFET

This is one of the types of MOSFETs and is a kind of transistor.

Part Number: STP55NF06, Marking : P55NF06

Function: N-CHANNEL 60V – 0.015 Ω- 50A STripFET II POWER MOSFET

Package: TO-220, D2PAK, TO-220FP Type

Manufacturer: ST Microelectronics

Image

P55NF06 mosfet

Description

The P55NF06 is a N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ST Microelectronics, NXP Semiconductors. Power MOSFETs are commonly used in a variety of power conversion and switching applications, including power supplies, motor drives, and switching power amplifiers.

This Power MOSFET is the latest development of STMicroelectronis unique “Single Feature Size strip based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Features

1. TYPICAL RDS(on) = 0.015 Ω

2. EXCEPTIONAL dv/dt CAPABILITY

Pinout

P55NF06 datasheet pdf

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 50 A

4. Channel temperature: Tch = 175 °C

5. Storage temperature: Tstg = -55 to +175 °C

 

Applications:

1. HIGH CURRENT, HIGH SWITCHING SPEED

2. MOTOR CONTROL, AUDIO AMPLIFIERS

3. DC-DC & DC-AC CONVERTERS

4. AUTOMOTIVE

 

Other data sheets are available within the file: STB55NF06, STP55NF06

P55NF06 Datasheet PDF

P55NF06 pdf


 

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D13007K Datasheet – NPN Transistor, 400V, 8A, 3DD13007K

This part name is D13007K, 3DD13007K.

This product function has NPN bipolar power transistor.

Package: TO-220 Type

The manufacturer of the product is Jilin Sino Microelectronics

Image and Pinouts:

D13007K Pinout

 

Description

The D13007K is the main process technology used in the manufacture of NPN bipolar high-power transistors. It includes high-voltage planar process technology, triple diffusion technology, etc. and adopts a horizontal design of the emission area grid that can maximize the current capacity and electrical shock resistance.

 

Features

1. High pressure

2. High current capacity

3. High switching speed

4. High reliability

5. High-frequency switching power supply

6. Energy-saving lamp electronic ballast

7. High-frequency power conversion

8. General power amplifier circuit

D13007K Datasheet

Applications

1. Energy-saving light

2. Electronic ballasts

3. High frequency switching power supply

4. High frequency power transform

5. Commonly power amplifier

Other data sheets are available within the file: 3DD13007K

D13007K Datasheet PDF Download


D13007K pdf

 

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