Author: pinout

3DD127D PDF Datasheet – 400V, 2.5A, 50W – NPN Transistor

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This post describes for the semiconductor 3DD127D.

The function of this semiconductor is 400V, 2.5A, NPN Transistor.

The package is TO-126F Type

The manufacturer of this parts is Huajing Microelectronics.

See the preview image and the 3DD127D Datasheet PDF file for more information.

Pinout3DD127D pinout

Description

The 3DD127D is a silicon NPN power switching transistor, which uses a planar process, a partial pressure ring terminal structure and a few child life control technology, integrated active anti-saturation network, improve the product breakdown voltage, switching speed and reliability.

1 page
3DD127D transistor pdf datasheet

 

Features

1. Low switching losses

2. Reverse leakage current is small

3. High temperature characteristics

4. Suitable switching speed

5. High reliability

 

Applications

1. Compact electronic energy saving lamp

2. Electronic ballast

3. General power switch circuit

 

3DD127D PDF Datasheet

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K4A60DA PDF Datasheet – 600V, 3.5A, N-Ch, MOSFET

Posted on by pinout

Part Number: K4A60DA, TK4A60DA

Function: 600V, 3.5A, N-Channel, MOSFET, Transistor

Package: TO-220 Type

Manufacturer: Toshiba

Images:

1 page
transistor K4A60DA pdf datasheet

Description

K4A60DA is 600V, 3.5A, Silicon N Channel MOS Type Field Effect Transistor(Metal Oxide Semiconductor Field Effect Transistor). This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

Features

1. Low drain-source ON resistance: RDS (ON) = 1.7 Ω (typ.)

2. High forward transfer admittance: ⎪Yfs⎪ = 2.2 S (typ.)

3. Low leakage current: IDSS = 10 μA (VDS = 600 V)

4. Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 3.5 A

4. Drain Power Dissipation: Pd = 35 W (Tc = 25°C)

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

3 page
mosfet K4A60DA equivalent

Applications:

1. Switching Regulator

 

K4A60DA PDF Datasheet

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