This is one of the transistor types.
Part Number: C2655
Function: NPN Transistor, Power Amplifier and Switching Applications.
Package: TO-92L Type
Manufacturer: Toshiba
Image
Description
C2655 transistor is a type of bipolar junction transistor (BJT) made from silicon, a semiconductor material. This transistor is designed for amplifying or switching electronic signals in various electronic circuits.
NPN Configuration
1. Emitter (N): The heavily doped N-type layer, which is the source of charge carriers (electrons) in the transistor.
2. Base (P): The thin P-type layer, which controls the flow of charge carriers between the emitter and collector.
3. Collector (N): The N-type layer, which collects the charge carriers that pass through the base-emitter junction.
Features
1. Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A)
2. High collector power dissipation: PC = 900 mW
3. High-speed switching: tstg = 1.0 μs (typ.)
4. Complementary to 2SA1020.
Pinouts:
Absolute maximum ratings ( Ta=25°C )
1. Collector-base voltage VCBO : 50 V
2. Collector-emitter voltage VCEO : 50 V
3. Emitter-base voltage VEBO : 5V
4. Collector current IC : 2A
Applications
1. Power Amplifier
2. Power Switching
Other data sheets are available within the file: 2SC2655
C2655 Datasheet PDF Download
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