K13A25D PDF Datasheet – 250V, N-ch, MOSFET, TK13A25D

This post explains for the N-Channel MOSFET.

The Part Number is K13A25D, TK13A25D.

The function of this semiconductor is 250V, 13A, N-Channel MOSFET.

The package is TO-220SIS Type

Manufacturer: Toshiba Semiconductor

Preview images :

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transistor K13A25D pinout

Description

K13A25D is Silicon N-Channel MOSFET(Metal Oxide Semiconductor Field Effect Transistor). This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

Features

(1) Low drain-source on-resistance: RDS(ON) = 0.19 Ω (typ.)

(2) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V)

(3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)

K13A25D datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 250 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 13 A

4. Power Dissipation: Pd = 35 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

• Switching Voltage Regulators

K13A25D PDF Datasheet

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HY3506P PDF Datasheet – 60V,190A, N-Ch, MOSFET – Hooyi

This post explains for the MOSFET HY3506.

The Part Number is HY3506P.

The function of this semiconductor is 60V,190A, N-Channel MOSFET.

The package is TO-220, TO-247 Type

Manufacturer: HOOYI Semicondcutor ( www.hooyi-semi.com )

Preview images :

1 page
HY3506P transistor datasheet

Description

HY3506P is 60V, 190A, N-Channel Enhancement Mode MOSFET.

This MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a type of MOSFET that is commonly used in electronic circuits for switching and amplification. It is called an enhancement mode MOSFET because its operation is enhanced by the presence of an external voltage.

Features

1. RDS(ON) = 3.0 mΩ (typ.) @ VGS=10V Pin

2. 100% avalanche tested

3. Reliable and Rugged

4. Lead Free and Green Devices Available (RoHS Compliant)

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V

2. Gate to source voltage: VGSS = ± 25 V

3. Drain current: ID = 190 A

4. Maximum Power Dissipation: Pd = 306 W

5. Channel temperature: Tch = 175 °C

6. Storage temperature: Tstg = -55 to +175 °C

HY3506P pdf pinout

 

Applications:

1. Switching application

2. Power Management for Inverter Systems

[…]

Other data sheets are available within the file: HY3506, HY3506W

HY3506P PDF Datasheet

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