Toshiba

C1815 Datasheet – 50V, 150mA, NPN Transistor, 2SC1815

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This is a kind of NPN Transistor. It is is a type of bipolar junction transistor (BJT) that consists of two n-type semiconductor materials separated by a single p-type material.

Part Number: C1815, 2SC1815

Function: 50V, 150mA, NPN Transistor

Package: TO-92 Type

Manufacturer: Toshiba Semiconductor

Image
C1815 image

Description

This is 50V, 150mA, Silicon NPN Epitaxail Type Transistor. C1815 transistor is a type of bipolar junction transistor (BJT) made from silicon, a semiconductor material. This transistor is designed for amplifying or switching electronic signals in various electronic circuits.

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Features

1.  High voltage and high current: VCEO= 50 V (min), IC= 150 mA (max)

2.  Excellent hFElinearity :

(1) hFE (2)= 100 (typ.)  at VCE= 6 V, IC= 150 mA

(2) hFE(IC= 0.1 mA)/hFE(IC= 2 mA)  = 0.95 (typ.)

3.  Low noise: NF = 1dB (typ.) at f = 1 kHz

4.  Complementary to 2SA1015 (O, Y, GR class)

Pinout

C1815 Datasheet

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 60 V

2. Collector to Emitter Voltage: Vceo = 50 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 150 mA

5. Total Dissipation : Pc = 400 mW

6. Junction Temperature: Tj = 125°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

Applications

1. Audio Frequency General Purpose Amplifier

2. Driver Stage Amplifier

C1815 Datasheet


 

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K3878 Datasheet PDF – 900V, N-ch, MOSFET – Toshiba

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Part Number: K3878

Function: 900V, 9A, Silicon N-Channel MOSFET

Package: TO-3P type

Manufacturer: Toshiba

Image

k3878-mosfet

Description

This is Silicon N-Channel MOS Field Effect Transistor(Metal Oxide Semiconductor Field Effect Transistor).

K3878 transistor is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

 

Features for K3878

1. Low drain-source ON-resistance: RDS (ON)= 1.0 Ω(typ.)

2. High forward transfer admittance: ⎪Yfs⎪= 7.0 S (typ.)

3. Low leakage current: IDSS= 100 μA (max) (VDS= 720 V)

4. Enhancement model: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

Pinouts

K3878 schematic
Absolute Maximum Ratings (Ta = 25°C)

1. Drain-source voltage: VDSS = 900 V

2. Drain-gate voltage (RGS = 20 kΩ): VDGR = 900 V

3. Gate-source voltage: VGSS = ±30 V

4. Drain current DC : ID = 9, Pulse : IDP = 27 A

5. Drain power dissipation (Tc = 25°C): PD = 150 W

6. Single pulse avalanche energy : EAS = 778 mJ

7. Avalanche current : IAR = 9 A

8. Repetitive avalanche energy : EAR = 15 mJ

9. Channel temperature: Tch = 150°C

Pinouts:
K3878 datasheet pinout

Application:

1. Switching Regulator

K3878 Datasheet

K3878 pdf


 

Other data sheets are available within the file: 2SK3878

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