30J127 Datasheet PDF – 600V, 200A, IGBT – GT30J127

This is a kind of IGBT. The IGBT is insulated-gate bipolar transistor.

Part Number: GT30J127

Function: 600V, 200A, IGBT

Package: TO-220SIS Type

The manufacturers of this product is Toshiba.

See the preview image and the PDF file for more information.

Image :

30J127 datasheet 600V IGBT

Description

30J127 transistor is 600V, 200A, IGBT. IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).

They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.

Features

1. PDP sustain, energy recovery and separation circuits

Datasheet

 

Applications  : Plasma display panels


Construction

The basic structure of the planar IGBT consists of four layers (pnpn), as shown in the following figure. Low saturation voltage is achieved by using a pnp transistor to allow conductivity modulation during conduction.

30J127 Pinout

30J127 pinout

 

Features of the Toshiba Discrete IGBTs

The Toshiba discrete IGBTs are available in high-voltage and high-current ratings. They are used in inverter and power conversion circuits for such diverse applications as motor drivers, uninterruptible power supply (UPS) systems, IH cookers, plasma display panels (PDPs), strobe flashes and so on.

(1) IGBTs also featuring fast switching

(2) Low collector-emitter saturation voltage even in the large current area

(3) IGBTs featuring a built-in diode with optimal characteristics tailored to specific applications

(4) High input impedance allows voltage drives

(5) Available in a variety of packages

 

30J127 Datasheet PDF Download


30J127 pdf

 

Other data sheets are available within the file:  GT45F127, GT30F125, GT30G124, GT30G125,  GT45G128

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K8A50D Datasheet – 500V, N-ch, MOSFET – Toshiba

This is one of the types of MOSFETs and is a kind of transistor.

Part Number: K8A50D, K8A500, TA8A500

Function: Silicon N Channel MOS Type Field Effect Transistor

Package: TO-220 Type

Manufacturer: Toshiba

Image :

k8a50d-mosfet

 

Description

This is 500V, 8A, N-Channel MOSFET(Metal Oxide Semiconductor Field Effect Transistor).

Correct Part Number K8A50D, Full Part Number TA8A50D.

K8A50D MOSFET is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

 

Features

1. Low drain-source ON-resistance: RDS (ON)= 0.7 Ω(typ.)

2. High forward transfer admittance: |Yfs| = 4.0 S (typ.)

3. Low leakage current: IDSS= 10 μA (max) (VDS= 500 V)

4. Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

 

Pinout

K8A50D datasheet pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 500 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 8 A

4. Drain Power Dissipation: Pd = 40 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Electrical Characteristics

K8A50D electrical characteristics

Applications:

1. Switching Regulator

 

K8A50D Datasheet

K8A500 pdf

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