This post explains for the MOSFET.

The Part Number is K3868, 2SK3868.

The function of this semiconductor is 500V, 5A, N-channel MOSFET.

Manufacturer: Toshiba Semiconductor

Preview images :

1 page ( Pinouts: 1. Gate, 2. Drain, 3 Source )

Description

K3868 is 500V, 5A, Silicon N-Channel MOS Type Field Effect Transistor.

 

Features

1. Low drain-source ON resistance: RDS (ON) = 1.3 Ω (typ.)

2. High forward transfer admittance: |Yfs| = 3 S (typ.)

3. Low leakage current: IDSS = 100 μA (VDS = 500 V)

4. Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 500 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 5 A

4. Drain Power Dissipation: Pd = 35 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

2 page

Applications:

1. Switching Regulator

K3868 PDF Datasheet

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This is N-Channel MOSFET. This is a kind of transistor.

Part Number: K10A60D

Function:  Silicon N Channel Power MOSFET Type

Package: TO-220SIS Type

Manufacturer: Toshiba

Image :

Description

K10A60D is Silicon N Channel Power MOSFET(Metal Oxide Semiconductor Field Effect Transistor). This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

Features

1. Low drain-source ON-resistance: RDS (ON)= 0.58 Ω(typ.)

2. High forward transfer admittance: |Yfs| = 6.0 S (typ.)

3. Low leakage current: IDSS= 10 μA(max)(VDS= 600 V)

4. Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

K10A60D Pinout

Electrical Characteristics (Ta =25°C)

 

Applications

1. Switching Regulator

Other data sheets are available within the file: K10A60 , TK10A60D

K10A60D Datasheet PDF

 

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