Part Number: P10N60C, FQP10N60C
Function: 600V, 9.5A, QFET MOSFET, Transistor
Package: TO-220, TO-220F Type
Manufacturer: Fairchild Semiconductor
Images:
1 page
Description
P10N60C is 600V, 9.5A, N-Channel MOSFET(Metal Oxide Semiconductor Field Effect Transistor).
This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
3 page
Features
1. 9.5A, 600V, RDS(on) = 0.73Ω @VGS = 10 V
2. Low gate charge ( typical 44 nC)
3. Low Crss ( typical 18 pF)
4. Fast switching
5. 100% avalanche tested
6. Improved dv/dt capability
Other data sheets are available within the file: FQP10N60C, FQPF10N60C
P10N60C PDF Datasheet
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