AN5522 PDF Datasheet – TV Vertical Deflector Output IC

This post explains for the IC for Display Vertical Deflector.

The Part Number is AN5522.

The function of this semiconductor is TV and CRT Display Vertical Output IC.

The package is TO-220-7 pin Type.

Manufacturer: Panasonic

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AN5522 Panasonic

( LA78040 = LA78041 = TDA8172 = STV9302A = TDA9302H )

Description

The AN5522 is a monolithic integrated circuit in Heptawatt package. It is a high efficiency power booster for direct driving of vertical windings of TV yokes. It is intended for use in color and black & white television as well as in monitors and displays.

This is a crucial component in a television’s circuitry responsible for controlling the vertical deflection of the electron beam in a CRT (Cathode Ray Tube) television or the vertical scanning in older types of TVs. This IC generates the necessary signals to move the electron beam vertically on the screen, allowing the TV to display a complete image.

The device is a vertical deflection output IC for high image quality TV and CRT displays that supports the use of a bus control system signal-processing IC. The sawtooth waveform from the bus control system signal-processing IC can directly drive the deflection yoke (including the DC component).

 

Pinouts
AN5522 pdf equivalent

Features

1. Power Amplifier

2. Flyback Generator

3. Thermal Protection

4. Built-in pump-up circuit for low power dissipation.

5. Vertical output circuit.

6. Thermal protection circuit.

AN5522 PDF Datasheet


 

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P55NF06 Datasheet PDF – 60V, 50A, N-ch, Power MOSFET

This is one of the types of MOSFETs and is a kind of transistor.

Part Number: STP55NF06, Marking : P55NF06

Function: N-CHANNEL 60V – 0.015 Ω- 50A STripFET II POWER MOSFET

Package: TO-220, D2PAK, TO-220FP Type

Manufacturer: ST Microelectronics

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P55NF06 mosfet

Description

The P55NF06 is a N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ST Microelectronics, NXP Semiconductors. Power MOSFETs are commonly used in a variety of power conversion and switching applications, including power supplies, motor drives, and switching power amplifiers.

This Power MOSFET is the latest development of STMicroelectronis unique “Single Feature Size strip based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Features

1. TYPICAL RDS(on) = 0.015 Ω

2. EXCEPTIONAL dv/dt CAPABILITY

Pinout

P55NF06 datasheet pdf

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 50 A

4. Channel temperature: Tch = 175 °C

5. Storage temperature: Tstg = -55 to +175 °C

 

Applications:

1. HIGH CURRENT, HIGH SWITCHING SPEED

2. MOTOR CONTROL, AUDIO AMPLIFIERS

3. DC-DC & DC-AC CONVERTERS

4. AUTOMOTIVE

 

Other data sheets are available within the file: STB55NF06, STP55NF06

P55NF06 Datasheet PDF

P55NF06 pdf


 

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