STPS30170C PDF Datasheet – 170V, 30A, Schottky Rectifier

Part Number: STPS30170C

Function: 170V, 15A X 2, High Voltage Power Schottky Rectifier

Package: D2PAK, TO-247 Type

Manufacturer: ST Microelectronics

Images:

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STPS30170C pdf diode

Description

STPS30170C is 170V, 30A, High Voltage Power Schottky Rectifier. Dual center tap Schottky rectifier designed for high frequency switch mode power supply.

A Schottky rectifier is a type of diode that is used for rectification purposes in electronic circuits.

It is characterized by a low forward voltage drop and fast switching speed, making it useful in high-frequency applications.

Unlike traditional diodes, which use p-n junctions to conduct current, Schottky diodes use a metal-semiconductor junction, which results in the low forward voltage drop and fast switching speed.

Features

1. High junction temperature capability

2. Good trade off between leakage current and forward voltage drop

3. Low leakage current

4. Avalanche capability specified

5. ECOPACK2 compliant component for D²PAK on demand

[…]

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STPS30170C datasheet rectifier

Absolute Maximum Ratings :

1. Repetitive peak reverse voltage : Vrrm = 170 V

2. Forward rms current : If(FMS) = 30 A

3. Channel temperature: Tch = 175 °C

4. Storage temperature: Tstg = -65 to +175 °C

STPS30170C PDF Datasheet

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K4111 PDF Datasheet – 600V, 10A, N-ch, MOSFET – Toshiba

This post explains for MOSFET.

The Part Number is K4111, 2SK4111.

The function of this semiconductor is N-channel 600V, 10A, MOSFET.

The package is TO-220 Type.

Manufacturer: Toshiba

Preview images :

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K4111 mosfet pinout

Description

K4111 is Silicon N Channel MOS Type Field Effect Transistor(Metal Oxide Semiconductor Field Effect Transistor). This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

Features

• Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ.)

• High forward transfer admittance: |Yfs| = 8.5S (typ.)

• Low leakage current: IDSS = 100 μA (max) (VDS = 600 V)

• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

 

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K4111 pdf datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 10 A

4. Drain Power Dissipation: Pd = 45 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Applications:

1. Switching Regulator

K4111 PDF Datasheet

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