Part Number: C2655
Function: NPN Transistor, Power Amplifier and Switching Applications.
Package: TO-92L Type
Manufacturer: Toshiba
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Description
C2655 transistor is a type of bipolar junction transistor (BJT) made from silicon, a semiconductor material. This transistor is designed for amplifying or switching electronic signals in various electronic circuits.
Features
1. Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A)
2. High collector power dissipation: PC = 900 mW
3. High-speed switching: tstg = 1.0 μs (typ.)
4. Complementary to 2SA1020.
Pinouts
Absolute maximum ratings ( Ta=25°C )
1. Collector-base voltage VCBO : 50 V
2. Collector-emitter voltage VCEO : 50 V
3. Emitter-base voltage VEBO : 5V
4. Collector current IC : 2A
Applications
1. Power Amplifier
2. Power Switching
Other data sheets are available within the file: 2SC2655
C2655 Datasheet PDF Download
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