This is N-Channel MOSFET. This is a kind of transistor.
Part Number: K10A60D
Function: Silicon N Channel Power MOSFET Type
Package: TO-220SIS Type
Manufacturer: Toshiba
Image :
Description
K10A60D is Silicon N Channel Power MOSFET(Metal Oxide Semiconductor Field Effect Transistor). This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.
Features
1. Low drain-source ON-resistance: RDS (ON)= 0.58 Ω(typ.)
2. High forward transfer admittance: |Yfs| = 6.0 S (typ.)
3. Low leakage current: IDSS= 10 μA(max)(VDS= 600 V)
4. Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)
K10A60D Pinout
Electrical Characteristics (Ta =25°C)
Applications
1. Switching Regulator
Other data sheets are available within the file: K10A60 , TK10A60D
K10A60D Datasheet PDF
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