Transistor

D2586 PDF Datasheet – 600V, 5A, NPN, Transistor, 2SD2586

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This post explains for the transistor.

Part Number: D2586, 2SD2586

Function: 600V, 5A, NPN Transistor

Package: TO-220 Type

Manufacturer: Toshiba

Images:

D2586 datasheet

 

Description

The D2586 is 600V, 5A, NPN Transistor. 

 

Features

1. High Voltage : VCBO = 1500 V

2. Low Saturation Voltage : VCE (sat) = 5 V (Max.)

3. High Speed : tf = 0.3 µs (Typ.)

4. Bult-in Damper Type

5. Collector Metal (Fin) is Fully Covered with Mold Resin.

Pinouts:

D2586 transistor pinout

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 1500 V

2. Collector to Emitter Voltage: Vceo = 600 V

3. Emitter to Base Voltage: Vebo =5 V

4. Collector Current: Ic = 5 A

5. Total Dissipation : Pc = 50 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

D2586 replacement

Applications

1. HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV

D2586 PDF Datasheet

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KIA7N60H PDF Datasheet – 7.0A, 600V, N-Ch, MOSFET

Posted on by pinout

This post explains for the MOSFET.

The Part Number is KIA7N60H.

The function of this semiconductor is N-CHANNEL MOSFET.

The package is TO-220, TO-220F, TO-263 Type

Manufacturer: KIA Semiconductor

Preview images :

1 page
KIA7N60H transistor pinout

Description

KIA7N60H is 600V, 7A, N-Channel MOSFET(Metal Oxide Semiconductor Field Effect Transistor).

This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

This Power MOSFET is produced using KIA`s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.

Features

1. RDS(on)=1.0Ω @ VGS=10V

2. Ultra low gate charge (typical 27nC)

3. Low reverse transfer capacitance

4. Fast switching capability

5. Avalanche energy tested

6. Improved dv/dt capability, high ruggedness

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 7 A

4. Channel temperature: Tch = 150 °C

5. Storage temperature: Tstg = -55 to +150 °C

 

KIA7N60H pdf datasheet

 

KIA7N60H PDF Datasheet

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