This is one of the types of MOSFETs and is a kind of transistor.
Part Number: HY4008
Function: 80V, 200A, N-Channel Enhancement Mode MOSFET (Transistor)
Package: TO-247, TO-3P Type
Manufacturer: Xi’an Hooyi Semiconductor Technology
Image
Description
An N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor), HY4008 transistor is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.
When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals.
Features
1. 80V/200A, RDS(ON)= mW (typ.) @VGS=10V
2. 100% avalanche tested
3. Reliable and Rugged
4. Lead Free and Green Devices Available (RoHSCompliant)
Pinouts:
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 80 V
2. Gate to source voltage: VGSS = ± 25 V
3. Drain current: ID = 200 A
4. Drain power dissipation : PD = 397 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +175 °C
Applications
1. Power Management for Inverter Systems.
2. Switching application
Other data sheets are available within the file: HY4008W, HY4008A
HY4008 Datasheet PDF Download
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