RJP3056DPK PDF Datasheet – IGBT, 300V, 45A, Transistor

Part Number: RJP3056DPK

Function: High-speed type IGBT for PDP, 300V, 45A

Package: TO-3P Type

Manufacturer: Renesas Technology

Images:

1 page
RJP3056DPK pdf datasheet

Description

RJP3056DPK is 300V, 45A, High-speed type IGBT for PDP.

IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).

They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.

Features

1. Low VCE (sat)

2. High-speed switching

2 page
RJP3053 datasheet RJP3065

 

Ordering Informations :

RJP3053 300 30 ±30 2.0 0.15 TO-220FN

RJP3063DPP 300 30 ±30 1.7 0.30 TO-220FN

RJP3054DPP 300 35 ±30 1.8 0.15 TO-220FN

RJP3064DPP 300 35 ±30 1.5 0.30 TO-220FN

RJP3055DPP 300 40 ±30 1.8 0.15 TO-220FN

RJP3065 300 40 ±30 1.5 0.3 TO-220FN

RJP4065DPP 400 40 ±30 1.6 0.3 TO-220FN

RJP2557DPK 270 50 ±30 1.6 0.15 TO-3P

RJP3057DPK 300 50 ±30 1.6 0.15 TO-3P

RJP3066DPK 300 45 ±30 1.4 0.3 TO-3P

RJP3067DPK 300 50 ±30 1.4 0.3 TO-3P

RJP4067DPK 400 50 ±30 1.7 0.35 TO-3P

RJP3056DPK PDF Datasheet

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H15R1203 PDF Datasheet – 1200V, 15A, IGBT, Transistor

This post explains for the IGBT.

The Part Number is IHW15N120R3.

The Marking is H15R1203.

The function of this semiconductor is 1200V, 15A, IGBT.

The package is TO-247-3 type

Manufacturer: Infineon Technologies

Preview images :

H15R1203 pdf datasheet

Description

H15R1203 is 1200V, 15A, Reverse conducting IGBT with monolithic body diode.

IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).

They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.

Features

1. Powerful monolithic body diode with low forward voltage designed for soft commutation only

2. TRENCHSTOPTM technology applications offers:

(1) Very tight parameter distribution

(2) High ruggedness, temperature stable behavior

(3) Low VCEsat

(4) Easy parallel switching capability due to positive temperature coefficient in VCEsat

3. Low EMI

4. Qualified according to JESD-022 for target applications

5. Pb-free lead plating; RoHS compliant

H15R1203 igbt equivalent

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 1200 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 15 A (Tc = 100°C)

4. Collector dissipation : Ptot = 254 W (Tc = 25°C)

5. Junction temperature : Tj = 175 °C

6. Storage temperature: Tstg = -55 to +175 °C

 

Applications:

1. Inductive cooking

2. Inverterized microwave ovens

3. Resonant converters

4. Soft switching applications

H15R1203 PDF Datasheet

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