IRF530N Datasheet PDF – 22A, 100V, N-Ch, Power MOSFET

Part Number: IRF530N

Function: 22A, 100V, 0.064 Ohm, N-Channel, Power MOSFET

Package: TO-220AB Type

Manufacturer: Fairchild Semiconductor

Image and pinout

IRF530N datasheet

Description

The IRF530N is 22A, 100V, 0.064 Ohm, N-Channel, Power MOSFET.

Features

1. Ultra Low On-Resistance : -rDS(ON)= 0.064Ω, VGS = 10V

2. Simulation Models
(1) Temperature Compensated PSPICE and SABER Electrical Models
(2) Spice and SABER Thermal Impedance Models

3. Peak Current vs Pulse Width Curve

4. UIS Rating Curve

 

Absolute Maximum Ratings

1. Drain to Source Voltage : VDSS = 100 V

2. Drain to Gate Voltage (RGS = 20kΩ): VDGR = 100 V

3. Gate to Source Voltage : VGS = ±20 V

4. Drain Current : ID = 22A

5. Power Dissipation: Pd = 85 W

 

IRF530N Datasheet PDF Download

IRF530N pdf


Other data sheets are available within the file: IRF530

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FS8205A Datasheet PDF – 20V, 6A, Dual N-Ch, MOSFET

This post explains for the MOSFET.

The Part Number is FS8205A.

The function of this MOSFET is Dual N-Channel MOSFET.

The package is TSSOP 8 Pin Type.

Manufacturer: Fortune Semicondcutor ( www.ic-fortune.com )

Images:

FS8205A datasheet

Description

This is 20V, 6A, Dual N-Channel Enhancement Mode Power MOSFET.

Features

1. Low On-resistacne

(1) Rds(on) = 25 mΩ MAX. (Vgs = 4.5V, Id = 4A )
(2) Rds(on) = 35 mΩ MAX. (Vgs = 2.5V, Id = 3A )

Pinout

FS8205A pinout mosfet

Absolute Maximum Ratings ( Ta=25°C )

1. Drain-Source Voltage : VDS = 20 V

2. Gate-Source Voltage : VGS= ±12 V

3. Continuous Drain Current :  ID = 6 A

4. Pulsed Drain Current : IDM = 25 A

5. Total Power Dissipation : PD = W

6. Storage Temperature Range : TSTG = -55 to 150 ℃

7. Operating Junction Temperature Range : TJ = -55 to 150 ℃

Applications:

1. Li-ion battery management appplications

 

FS8205A Datasheet

FS8205A pdf


 

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