Toshiba

A1013 Datasheet PDF – 160V, 1A, PNP Transistor, 2SA1013

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This is one of the transistor types.

Part Number: A1013, 2SA1013

Function: -160V, -1A, PNP Transistor

Package: TO-92 Type

Manufacturer: Toshiba Semiconductor

Image

A1013 image

Description

The A1013 is -160V, -1A, Silicon PNP Epitaxial Type Transistor.

Features

1.  High voltage: VCEO= -160 V

2.  Large continuous collector current capability

3.  Recommended for vertical deflection output & sound output applications for line-operated TV.

4.  Complementary to 2SC2383.

A1013 pinout

A1013 datasheet

Maximum Ratings (Ta = 25°C)

1. Collector-base voltage : VCBO = -160 V

2. Collector-emitter voltage : VCEO = -160 V

3. Emitter-base voltage : VEBO = -6 V

4. Collector current : IC = -1 A

5. Base current : IB = -0.5 A

6. Collector power dissipation : PC = 900 mW

7. Junction temperature : Tj = 150 °C

Applications:

1. Color TV Verttical Deflection Output

2. Power Switching

A1013 Datasheet PDF

A1013 pdf


 

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K3067 Datasheet – 600V, 2A, N-Ch, MOSFET (Transistor)

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This is one of the types of MOSFETs and is a kind of transistor.

Part Number: K3067

Function: 600V, N-Channel MOSFET (Transistor)

Package: TO-220 Type

Manufacturer: Toshiba

Images:

K3067 datasheet

K3067 Description

The K3067 is a N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Toshiba. It is commonly used as a switch in power electronics applications, where its low on-resistance and fast switching speed make it well-suited for high-efficiency power conversion systems.

The 2SK3067 has a maximum drain-source voltage of 600V and a maximum drain current of 2A,
making it suitable for high voltage, high current applications.

Features

1. Low drain−source ON resistance : RDS (ON) = 4.2 Ω (typ.)
2. High forward transfer admittance : |Yfs| = 1.7 S (typ.)
3. Low leakage current : IDSS = 100 μA (max) (VDS = 600 V)
4. Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

Pinout

K3067 pinout transistor

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 2 A
4. Drain power dissipation : PD = 25 W
5. Single pulse avalanche energy : Eas = 93 mJ
6. Repetitive avalanche energy : Ear = 2.5 mJ
7. Channel temperature: Tch = 150 °C
8. Storage temperature: Tstg = -55 to +150 °C

Applications

1. Chopper Regulator
2. DC−DC Converter and Motor Drive

Other data sheets are available within the file: 2SK3067

K3067 Datasheet PDF Download

K3067 pdf

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