RJP3056DPK PDF Datasheet – IGBT, 300V, 45A, Transistor

Part Number: RJP3056DPK

Function: High-speed type IGBT for PDP, 300V, 45A

Package: TO-3P Type

Manufacturer: Renesas Technology

Images:

1 page
RJP3056DPK pdf datasheet

Description

RJP3056DPK is 300V, 45A, High-speed type IGBT for PDP.

IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).

They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.

Features

1. Low VCE (sat)

2. High-speed switching

2 page
RJP3053 datasheet RJP3065

 

Ordering Informations :

RJP3053 300 30 ±30 2.0 0.15 TO-220FN

RJP3063DPP 300 30 ±30 1.7 0.30 TO-220FN

RJP3054DPP 300 35 ±30 1.8 0.15 TO-220FN

RJP3064DPP 300 35 ±30 1.5 0.30 TO-220FN

RJP3055DPP 300 40 ±30 1.8 0.15 TO-220FN

RJP3065 300 40 ±30 1.5 0.3 TO-220FN

RJP4065DPP 400 40 ±30 1.6 0.3 TO-220FN

RJP2557DPK 270 50 ±30 1.6 0.15 TO-3P

RJP3057DPK 300 50 ±30 1.6 0.15 TO-3P

RJP3066DPK 300 45 ±30 1.4 0.3 TO-3P

RJP3067DPK 300 50 ±30 1.4 0.3 TO-3P

RJP4067DPK 400 50 ±30 1.7 0.35 TO-3P

RJP3056DPK PDF Datasheet

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K3568 PDF – 500V, 12A, N-channel MOSFET – Toshiba

What is K3568?

This post explains for a silicon N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed for use in high-speed power switching applications.

The Part Number is 2SK3568.

The function of this semiconductor is 500V, 12A, N-Channel MOSFET.

The package is TO-220 type

Manufacturer: Toshiba Semiconductor

Image

K3568 pdf toshiba

Description

K3568 is 500V, 12A, Silicon N-Channel MOS Type Field Effect Transistor.

1. Can handle high-frequency signals

2. Low conduction losses

3. Can operate at high temperatures

4. High reliability and long lifespan

5. May require heat sinking in high-power applications

6. More expensive than some other types of MOSFETs

7. May be susceptible to damage from electrostatic discharge (ESD)

Features

1. Low drain-source ON-resistance: RDS (ON) = 0.4 Ω (typ.)

2. High forward transfer admittance: |Yfs| = 8.5 S (typ.)

3. Low leakage current: IDSS = 100 μA (VDS = 500 V)

4. Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Preview images :

K3568 transistor datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 500 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 12 A

4. Drain Power Dissipation: Pd = 40 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Applications

1. Switching Regulator

K3568 PDF Datasheet

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