This part name is D13007K, 3DD13007K.

This product function has NPN bipolar power transistor.

Package: TO-220 Type

The manufacturer of the product is Jilin Sino Microelectronics

Image and Pinouts:

 

Description

The D13007K is the main process technology used in the manufacture of NPN bipolar high-power transistors. It includes high-voltage planar process technology, triple diffusion technology, etc. and adopts a horizontal design of the emission area grid that can maximize the current capacity and electrical shock resistance.

 

Features

1. High pressure

2. High current capacity

3. High switching speed

4. High reliability

5. High-frequency switching power supply

6. Energy-saving lamp electronic ballast

7. High-frequency power conversion

8. General power amplifier circuit

Applications

1. Energy-saving light

2. Electronic ballasts

3. High frequency switching power supply

4. High frequency power transform

5. Commonly power amplifier

Other data sheets are available within the file: 3DD13007K

D13007K Datasheet PDF Download

 

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Part Number: C2655

Function: NPN Transistor, Power Amplifier and Switching Applications.

Package: TO-92L Type

Manufacturer: Toshiba

Image

Description

C2655 transistor is a type of bipolar junction transistor (BJT) made from silicon, a semiconductor material. This transistor is designed for amplifying or switching electronic signals in various electronic circuits.

 

Features

1. Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A)

2. High collector power dissipation: PC = 900 mW

3. High-speed switching: tstg = 1.0 μs (typ.)

4. Complementary to 2SA1020.

 

Pinouts

Absolute maximum ratings ( Ta=25°C )

1. Collector-base voltage VCBO : 50 V

2. Collector-emitter voltage VCEO : 50 V

3. Emitter-base voltage  VEBO : 5V

4. Collector current IC : 2A

Applications

1. Power Amplifier

2. Power Switching

Other data sheets are available within the file: 2SC2655

C2655 Datasheet PDF Download

 

 

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